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APT21M100J
1000V, 21A, 0.40 Max
N-Channel MOSFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
S G D
S
SO
2 T-
27
ISOTOP (R)
"UL Recognized"
file # E145592
APT21M100J
G
D
Single die MOSFET
S
FEATURES
* Fast switching with low EMI/RFI * Low RDS(on) * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* PFC and other boost converter * Buck converter * Two switch forward (asymmetrical bridge) * Single switch forward * Flyback * Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 21 13 120 30 1875 16
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.15 150 Min Typ Max 462 0.27 Unit W C/W C V
2-2007 050-8077 Rev A
oz g in*lbf N*m
Torque
Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VDS = 1000V VGS = 0V TJ = 25C TJ = 125C
APT21M100J
Typ 1.15 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.34 4 -10
0.40 5 100 500 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 16A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 34 8500 115 700 290
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 667V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 16A, VDS = 500V Resistive Switching VDD = 667V, ID = 16A RG = 2.2 6 , VGG = 15V
150 260 46 125 39 35 130 33
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 100
Unit A
G S
200 1 1140 30 10 V ns C V/ns
ISD = 16A, TJ = 25C, VGS = 0V ISD = 16A 3 diSD/dt = 100A/s, TJ = 25C ISD 16A, di/dt 1000A/s, VDD = 667V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 14.65mH, RG = 2.2, IAS = 16A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8077
Rev A
2-2007
100 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0
V
GS
= 10V
35 30
APT21M100J
T = 125C
J
V
ID, DRIAN CURRENT (A)
TJ = -55C
GS
= 6, 7, 8 & 9V
25 20 15 10 5 0 0
4.5V
TJ = 25C
5V
TJ = 125C
TJ = 150C
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 16A
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
120 100 ID, DRAIN CURRENT (A) 80 60 40
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C TJ = 25C
TJ = 125C
20 0
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 45 40
0
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
Ciss
20,000 10,000
gfs, TRANSCONDUCTANCE
30 25 20 15 10 5 0 0
TJ = 25C TJ = 125C
C, CAPACITANCE (pF)
35
TJ = -55C
1000
100
Coss
Crss
16 12 8 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 4
ID = 16A
20
1000 800 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 120 ISD, REVERSE DRAIN CURRENT (A) 100 80 60
TJ = 25C
10
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 200V
VDS = 500V
TJ = 150C
20 0
050-8077
50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 0
Rev A
2-2007
VDS = 800V
40
200 100
I
200 100 ID, DRAIN CURRENT (A)
DM
APT21M100J
ID, DRAIN CURRENT (A)
IDM
10
13s
100s
1ms
10
13s
100s
1ms
Rds(on) 10ms 100ms TJ = 150C TC = 25C DC line
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
1
Rds(on)
10ms
100ms
1
0.1
TJ = 125C TC = 75C
DC line
1
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
C
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0260 Dissipated Power (Watts) 0.00119 0.0354 0.463 0.0584
TC (C)
0.185 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.30 ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.20 0.15 0.10 0.05 0
D = 0.9 0.7
0.5 0.3 0.1 0.05
ZEXT
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-5
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
2-2007
14.9 (.587) 15.1 (.594)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Source Dimensions in Millimeters and (Inches)
Gate
050-8077
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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